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Your position: Home / 1. Diode laser
Specifications
Height:
47mm, 52mm
Output power:
200w-1600w
Chip bars:
50W/bar, 100W/bar. US chips, Chinese chips
| DESCRIPTION | SKU |
| Beijing HT, 808nm, HR10300, 250W, 5 bars*50W, stable good quality Chinese chips | L069 |
| Beijing HT, 808nm, 300W, 6 bars*50W, stable good quality Chinese chips | L079 |
| Beijing HT, 808nm, HR10400 350W. 7 bars*50W stable good quality Chinese chip | L080 |
| Beijing HT, 808nm, HR10400 400W. 8 bars*50W stable good quality Chinese chip | L577 |
| Beijing HT, 808nm, 500W, 10 bars*50W, stable good quality Chinese chips | L081 |
| Beijing HT, 808nm, 600W, 12 bars*50W, stable good quality Chinese chips | L090 |
| Beijing HT, 808NM HR10800, 800W, 16 bars*50W, Chinese good stable chip | L096 |
| Beijing HT, 808nm, 600W, 6 bars*100W, stable good quality Chinese chips | L093 |
| Beijing HT, 808nm, 800W, 8 bars*100W, stable good quality Chinese chips | L095 |
| Beijing HT, 808nm, 500W, 5 bars*100W, stable good quality Chinese chips | L089 |
| Beijing HT, 808nm, 1000W, 10 bars*100W, stable good quality Chinese chips | L099 |
| Beijing HT, 808nm, 1200W, 12 bars*100W, stable good quality Chinese chips | L101 |
| Beijing HT, 300W, 6 bars*50W, 2 bars*755nm+2 bars*808nm+2 bars*1064nm | L080 |
| Beijing HT, 500W, 10 bars*50W, 4 bars*808nm+3 bars*755nm+3 bars*1064nm, US chips, HR30500 | L082 |
| Beijing HT, 500W, 10 bars*50W, 4 Chinese bars*808nm+3 US bars*755nm+3 Chinese bars*1064nm | L083 |
| Beijing HT, 500W, 10 bars*50W, 4 bars*808nm+4 bars*755nm+2 bars*1064nm, US chips | L084 |
| Beijing HT, 500W, 10 bars*50W, 4 Chinese bars*808nm+4 US bars*755nm+2 Chinese bars*1064nm | L085 |
| Beijing HT, 500W, 10 bars*50W, 8 bars*808nm+ 2 bars*1064nm, US chips | L086 |
| Beijing HT, 500W, 10 bars*50W, 8 bars*808nm+ 2 bars*1064nm , stable good quality Chinese chips | L087 |
| Beijing HT, 600W, 12 bars*50W, 4 bars*755nm+4 bars*808nm+4 bars*1064nm | L091 |
Parameter
Height: 37mm, 300W-600W, 50W/Bar
Near Infrared High Power Vertical Stack
Semiconductor laser beauty module
This series of 808nm high-power vertical stacked semiconductor laser module products is designed for laser hair removal applications. It can provide up to 10 laser bars vertically stacked and packaged to form high-power laser output. The maximum continuous output power of a single bar laser is 100W. This series of products adopts high-density laser bar stacking technology, and the bar spacing is small, so that the module can obtain high-brightness laser output while maintaining a small size, providing efficient work .
Technical Index ( 20℃ )
Height: 37mm, 300W-600W, 50W/Bar
Semiconductor laser beauty module
This series of 808nm high-power vertical stacked semiconductor laser module products is designed for laser hair removal applications. It can provide up to 10 laser bars vertically stacked and packaged to form high-power laser output. The maximum continuous output power of a single bar laser is 100W. This series of products adopts high-density laser bar stacking technology, and the bar spacing is small, so that the module can obtain high-brightness laser output while maintaining a small size, providing efficient work .
- Laser output power up to 1000W
- Compact package, efficient heat dissipation design
- Indium-free package provides higher reliability
- Macro channel water cooling, no special water quality requirements
Technical Index ( 20℃ )
Height: 37mm, 300W-600W, 50W/Bar
| High Power Vertical Stacked Diode Laser Module | ||||
| parameter | unit | LDAQ2-0808-**** | ||
| Operating mode | - | QCW ( quasi-continuous ) | ||
| Working wavelength | nm | 808 ± 10 | 808 ± 10 | 808 ± 10 |
| Output Power | W | 300 | 500 | 600 |
| Number of bars | - | 5/6 | 10 | 12 |
| Working current | A | ≤50 | ≤50 | ≤50 |
| Operating Voltage | V/bar | ≤2 | ≤2 | ≤2 |
| Pulse width | ms | ≤400 | ≤400 | ≤400 |
| duty cycle | % | ≤40 | ≤40 | ≤40 |
| Bar spacing | mm | 2 | 2 | 2 |
| Light emitting area | mm×mm | 10×11 | 10×19.5 | 10×22 |
| Operating temperature | ℃ | 15 ~ 35 | ||
| Storage temperature | ℃ | -10 ~ 50 | ||
| Flow | L/min | ≥ 3.5 | ||
Package Outline Drawing
1 . Product model description: L D A Q 2 ( product type ) - 080 8 ( central wavelength ) - ** * * ( output power ) ;
2. The package outline drawing is for reference only, and can be packaged according to the drawing provided by the customer;
3. The output power can be customized according to customer requirements;
4. Please make sure that the laser works at 15 ~ 35°C . Working at a higher temperature will increase the threshold current, reduce conversion efficiency, and accelerate device aging;
Height: 52mm, 800W-1600W, 100W/Bar
Near Infrared High Power Vertical Stack
Semiconductor laser beauty module
This series of 808nm high-power vertical stacked semiconductor laser module products is designed for laser hair removal applications. It can provide up to 16 laser bars vertically stacked and packaged to form high-power laser output. The maximum continuous output power of a single bar laser is 100W. This series of products adopts high-density laser bar stacking technology, and the bar spacing is small, so that the module can obtain high-brightness laser output while maintaining a small size, providing efficient work .
Semiconductor laser beauty module
This series of 808nm high-power vertical stacked semiconductor laser module products is designed for laser hair removal applications. It can provide up to 16 laser bars vertically stacked and packaged to form high-power laser output. The maximum continuous output power of a single bar laser is 100W. This series of products adopts high-density laser bar stacking technology, and the bar spacing is small, so that the module can obtain high-brightness laser output while maintaining a small size, providing efficient work .
- Laser output power up to 1600W
- Compact package, efficient heat dissipation design
- Gold-tin package provides higher reliability
- Macro channel water cooling, no special water quality requirements
Technical Index ( 20℃ )
Height: 52mm, 800W-1600W, 100W/Bar| High Power Vertical Stacked Diode Laser Module | |||||
| Parameter | unit | LDAQ2-0808-**** | |||
| Operating mode | - | QCW (quasi-continuous) | |||
| Working wavelength | nm | 808 ± 10 | 808 ± 10 | 808 ± 10 | 808 ± 10 |
| Output Power | W | 800 | 1000 | 1200 | 1600 |
| Number of bars | - | 8 | 10 | 12 | 16 |
| Working current | A | ≤105 | ≤105 | ≤105 | ≤105 |
| Operating Voltage | V/bar | ≤2 | ≤2 | ≤2 | ≤2 |
| pulse width | ms | ≤200 | ≤200 | ≤200 | ≤200 |
| Duty cycle | % | ≤20 | ≤20 | ≤20 | ≤20 |
| Bar spacing | mm | 3.2 | 3.2 | 3.2 | 2.2 |
| Light emitting area | mm×mm | 10×22 | 10×29 | 10×35 | 10×33 |
| Operating Temperature | ℃ | 15 ~ 35 | |||
| Ttorage temperature | ℃ | -10 ~ 50 | |||
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