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  • Description
    Specifications
    Height: 47mm, 52mm Output power: 200w-1600w Chip bars: 50W/bar, 100W/bar. US chips, Chinese chips
    DESCRIPTION SKU
    Beijing HT, 808nm, HR10300, 250W, 5 bars*50W, stable good quality Chinese chips  L069 
    Beijing HT, 808nm, 300W, 6 bars*50W, stable good quality Chinese chips  L079 
    Beijing HT, 808nm, HR10400 350W. 7 bars*50W stable good quality Chinese chip  L080 
    Beijing HT, 808nm, HR10400 400W. 8 bars*50W stable good quality Chinese chip  L577 
    Beijing HT, 808nm, 500W, 10 bars*50W, stable good quality Chinese chips  L081 
    Beijing HT, 808nm, 600W, 12 bars*50W, stable good quality Chinese chips  L090 
    Beijing HT, 808NM HR10800, 800W, 16 bars*50W, Chinese good stable chip  L096 
    Beijing HT, 808nm, 600W, 6 bars*100W, stable good quality Chinese chips  L093 
    Beijing HT, 808nm, 800W, 8 bars*100W, stable good quality Chinese chips  L095 
    Beijing HT, 808nm, 500W, 5 bars*100W, stable good quality Chinese chips  L089 
    Beijing HT, 808nm, 1000W, 10 bars*100W, stable good quality Chinese chips  L099 
    Beijing HT, 808nm, 1200W, 12 bars*100W, stable good quality Chinese chips  L101 
    Beijing HT, 300W, 6 bars*50W, 2 bars*755nm+2 bars*808nm+2 bars*1064nm  L080 
    Beijing HT, 500W, 10 bars*50W, 4 bars*808nm+3 bars*755nm+3 bars*1064nm, US chips, HR30500  L082 
    Beijing HT, 500W, 10 bars*50W, 4 Chinese bars*808nm+3 US bars*755nm+3 Chinese bars*1064nm  L083 
    Beijing HT, 500W, 10 bars*50W, 4 bars*808nm+4 bars*755nm+2 bars*1064nm, US chips  L084 
    Beijing HT, 500W, 10 bars*50W, 4 Chinese bars*808nm+4 US bars*755nm+2 Chinese bars*1064nm  L085 
    Beijing HT, 500W, 10 bars*50W, 8 bars*808nm+ 2 bars*1064nm, US chips  L086 
    Beijing HT, 500W, 10 bars*50W, 8 bars*808nm+ 2 bars*1064nm , stable good quality Chinese chips  L087 
    Beijing HT, 600W, 12 bars*50W, 4 bars*755nm+4 bars*808nm+4 bars*1064nm  L091 

    Parameter


    Height: 37mm, 300W-600W, 50W/Bar

    Near Infrared High Power Vertical Stack
    Semiconductor laser beauty module

     This series of 808nm high-power vertical stacked semiconductor laser module products is designed for laser hair removal applications. It can provide up to 10 laser bars vertically stacked and packaged to form high-power laser output. The maximum continuous output power of a single bar laser is 100W. This series of products adopts high-density laser bar stacking technology, and the bar spacing is small, so that the module can obtain high-brightness laser output while maintaining a small size, providing efficient work .  
    1. Laser output power up to 1000W
    2. Compact package, efficient heat dissipation design 
    3. Indium-free package provides higher reliability
    4. Macro channel water cooling, no special water quality requirements 
     
    Technical Index ( 20℃ )
      Height: 37mm, 300W-600W, 50W/Bar
    High Power Vertical Stacked Diode Laser Module
    parameter unit LDAQ2-0808-****
    Operating mode - QCW ( quasi-continuous )
    Working wavelength nm 808 ± 10 808 ± 10 808 ± 10
    Output Power W 300 500 600
    Number of bars - 5/6 10 12
    Working current A ≤50 ≤50 ≤50
    Operating Voltage V/bar ≤2 ≤2 ≤2
    Pulse width ms ≤400 ≤400 ≤400
    duty cycle % ≤40 ≤40 ≤40
    Bar spacing mm 2 2 2
    Light emitting area mm×mm 10×11 10×19.5 10×22
    Operating temperature 15 ~ 35
    Storage temperature -10 ~ 50
    Flow L/min 3.5

    Package Outline Drawing

    1 . Product model description: L D A Q 2 ( product type ) - 080 8 ( central wavelength ) - ** * * ( output power ) ;
     
    2. The package outline drawing is for reference only, and can be packaged according to the drawing provided by the customer;
     
    3. The output power can be customized according to customer requirements;
     
    4. Please make sure that the laser works at 15 ~ 35°C . Working at a higher temperature will increase the threshold current, reduce conversion efficiency, and accelerate device aging;


     
     

    Height: 52mm, 800W-1600W, 100W/Bar

    Near Infrared High Power Vertical Stack
    Semiconductor laser beauty module

    This series of 808nm high-power vertical stacked semiconductor laser module products is designed for laser hair removal applications. It can provide up to 16 laser bars vertically stacked and packaged to form high-power laser output. The maximum continuous output power of a single bar laser is 100W. This series of products adopts high-density laser bar stacking technology, and the bar spacing is small, so that the module can obtain high-brightness laser output while maintaining a small size, providing efficient work .  
    1. Laser output power up to 1600W
    2. Compact package, efficient heat dissipation design 
    3. Gold-tin package provides higher reliability 
    4. Macro channel water cooling, no special water quality requirements

    Technical Index ( 20℃ )

    Height: 52mm, 800W-1600W, 100W/Bar
    High Power Vertical Stacked Diode Laser Module
    Parameter unit LDAQ2-0808-****
    Operating mode - QCW (quasi-continuous)
    Working wavelength nm 808 ± 10 808 ± 10 808 ± 10 808 ± 10
    Output Power W 800 1000 1200 1600
    Number of bars - 8 10 12 16
    Working current A ≤105 ≤105 ≤105 ≤105
    Operating Voltage V/bar ≤2 ≤2 ≤2 ≤2
    pulse width ms ≤200 ≤200 ≤200 ≤200
    Duty cycle % ≤20 ≤20 ≤20 ≤20
    Bar spacing mm 3.2 3.2 3.2 2.2
    Light emitting area mm×mm 10×22 10×29 10×35 10×33
    Operating Temperature 15 ~ 35
    Ttorage temperature -10 ~ 50

808 diode laser stack HR10500 HT HR20 HR30 1064 755 laser bars laser transmitter emitter HT HR20 HR30 1600w

USD
$185.00
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